English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33838
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

AuthorsGonzález Díez, Yolanda ; Mazuelas Esteban, Ángel José ; Recio Segoviano, Miguel ; González Sotos, Luisa ; Armelles Reig, Gaspar ; Briones Fernández-Pola, Fernando
Issue Date1991
CitationApplied Physics A 53(3): 260-264 (1991)
AbstractIn-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress state at different distances to the interface GaAs/Si, layers of different thickness were prepared by chemical etching of the grown samples. We observe a non-uniform residual strain distribution through the GaAs on Si epilayer. Residual strain of thermal origin is larger in the highly defective region ( ~ 0.4 µm) near the GaAs/Si interface where we have found a non-elastic relation between measured in-plane (a ║) and in growth direction (a ┴ ) lattice parameters. However, thermal strain is partially relaxed by formation of 107 cm–2 dislocations in the region of better crystalline quality near the external surface.
Description5 páginas, 7 figuras.-- PACS: 68.55 + b, 62.20 Fe, 78.65 Jd.
Publisher version (URL)http://dx.doi.org/10.1007/BF00324262
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.