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Título: | GaAs electrolyte electroreflectance: low-field spectra and flat-band potential shift measurements |
Autor: | Salvador, Patricia; González Díez, Yolanda CSIC ORCID; González Sotos, Luisa CSIC ORCID | Fecha de publicación: | 2-abr-1991 | Editor: | Elsevier | Citación: | Surface Science 245(3): 324-332 (1991) | Resumen: | The electrolyte electroreflectance (HER) spectra of GaAs crystals, both undoped, highly compensated (NA ≈ ND = 3 × 1015 cm−3 and n-type (Nd = 1017cm−3), were studied as a function of the applied bias in the photon energy range corresponding to EE0 + Δ0 transitions. Unequivocal experimental evidence was obtained for the first time that the low-field limit of Aspnes third-derivative model applies to sufficiently low doped GaAs samples, as is the case for our undoped crystal. In this case, a reliable measurement of the flat-band potential (Vfb) could be obtained by means of HER voltammetries. The behaviour of the n-type sample was found to be different in two main aspects: first, low field conditions could not be fitted; second, Vfb appeared shifted by about 2.0 V towards negative values because of a strong Fermi-level pinning effect associated with the surface electro-reduction of the electrode. These Vfb shifts, which are associated with the n-type character, prevent any reliable Vfb measurement, even if the concentration of free carriers is sufficiently low and low-field conditions are fulfilled. | Descripción: | 9 páginas, 6 figuras. | Versión del editor: | http://dx.doi.org/10.1016/0039-6028(91)90034-P | URI: | http://hdl.handle.net/10261/33837 | DOI: | 10.1016/0039-6028(91)90034-P | ISSN: | 0039-6028 |
Aparece en las colecciones: | (IMN-CNM) Artículos (ICP) Artículos |
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