Low Temperature GaAs/Si Technology: from Si Substrate Preparation to the Epitaxial Growth

Abstract

An actual development of GaAs/Si technology is subjected entirely to reduce the temperature of the full growth process, from the Si surface preparation to the epitaxial growth itself. In this paper we demonstrate the successful combination of a low temperature Si surtace preparation process (400°C<TSi<550°C) adequate for further III-V epitaxial growth with a low temperature growth process (Tg=300°C) using Atomic Layer Molecular Beam Epitaxy (ALMBE). Experimental results obtained on reflection modulator structures grown at Tg=300°C by ALMBE on low temperature prepared Si substrates permit an actual advancement towards monolithic integration of III-V devices to Si circuits.