English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33830
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE

AuthorsGonzález Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Vilà, A.; Cornet, A.; Morante, J. R.
Issue DateOct-1992
PublisherElsevier
CitationJournal of Crystal Growth 123(3-4): 385-392 (1992)
AbstractFirst stages of GaAs, AlAs and GaAs-on-AlAs growth on Si by atomic layer molecular beam epitaxy (ALMBE) and conventional MBE has been studied by in situ RHEED and Auger electron spectroscopy (AES) techniques and by high resolution electron microscopy (HREM) after growth. Our results allow us to assess the growth conditions necessary to achieve monolayer by monolayer growth of GaAs on Si.
Description8 páginas, 6 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/0022-0248(92)90598-D
URIhttp://hdl.handle.net/10261/33830
DOI10.1016/0022-0248(92)90598-D
ISSN0022-0248
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work
 

Related articles:


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.