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Initial stage of epitaxial growth at low temperature of GaAs and AlAs on Si by atomic layer molecular beam epitaxy (ALMBE) and MBE

AuthorsGonzález Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; Vilà, A.; Cornet, A.; Morante, J. R.
Issue DateOct-1992
CitationJournal of Crystal Growth 123(3-4): 385-392 (1992)
AbstractFirst stages of GaAs, AlAs and GaAs-on-AlAs growth on Si by atomic layer molecular beam epitaxy (ALMBE) and conventional MBE has been studied by in situ RHEED and Auger electron spectroscopy (AES) techniques and by high resolution electron microscopy (HREM) after growth. Our results allow us to assess the growth conditions necessary to achieve monolayer by monolayer growth of GaAs on Si.
Description8 páginas, 6 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/0022-0248(92)90598-D
Appears in Collections:(IMN-CNM) Artículos
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