English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33826
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


A study of the evolution process of antiphase boundaries in GaAs on Si

AuthorsMolina, Sergio I.; Aragón, G.; García, Rafael; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando
Antiphase boundaries
GaAs on silicon
Issue Date1993
CitationJournal of Electronic Materials 22(5): 565-572 (1993)
AbstractA study by high resolution electron microscopy and conventional transmission electron microscopy of the process of closure of antiphase boundaries (APB) in atomic layer molecular beam epitaxy (ALMBE) grown GaAs on silicon is reported. A parallelepipedical shape, closed at the top by another boundary with a semispheric shape, is proposed for the during growth suppressed APBs in GaAs epilayers. Antiphase boundaries are mostly located in {100} plans. Sixty degree dislocations are involved in the process of bending of APBs from {110} to {11n} planes; this bending is the initial step which must take place to get a single domain by interaction of two APBs. The proposed shape for closed APBs is in good agreement with the quasi two-dimensional growth observed for GaAs grown on silicon by ALMBE.
Description6 páginas.
Publisher version (URL)http://dx.doi.org/10.1007/BF02661632
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.