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dc.contributor.authorArmelles Reig, Gaspar-
dc.contributor.authorCastrillo, Pedro-
dc.contributor.authorDomínguez, P. S.-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorRuiz, A.-
dc.contributor.authorContreras-Solorio, D. A.-
dc.contributor.authorVelasco, V. R.-
dc.contributor.authorGarcía-Moliner, F.-
dc.identifier.citationJournal de Physique IV 3(C5): 283-287 (1993)es_ES
dc.description4 páginas, 2 figuras, 1 tabla.-- Comunicación oral presentada a la 3ª International Conference on Optics and Excitons in Confined Systems celbrada en Montpellier (Francia/1993).es_ES
dc.description.abstractThe optical response of excitons in (311) oriented GaAs/AlAs superlattices grown by atomic layer molecular beam epitaxy at low substrate temperature is studied by piezoreflectance. Several transitions are detected showing heavy hole and light hole character. The heavy hole transitions are more polarized along the [(-2)33] direction whereas the light hole ones are more polarized along the [01(-1)] direction. According to the calculation based on an empirical tight binding model, the observed optical anisotropy is related to the different components of the superlatices valence band wave functions.es_ES
dc.description.sponsorshipThis work was partially supported by the Comisión Interministerial de Ciencia y Tecnologia, under Grants No: MAT91-0738 and No: Mat92-0262. One of us (DAC-S) is grateful to the European Community for support.es_ES
dc.publisherEDP Scienceses_ES
dc.titleExcitons in {311} oriented superlattices: optical anisotropieses_ES
dc.typecomunicación de congresoes_ES
dc.description.peerreviewedPeer reviewedes_ES
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