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A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

AuthorsAragón, G.; Castro, M. J. de; Molina, Sergio I.; González Díez, Yolanda ; González Sotos, Luisa ; Briones Fernández-Pola, Fernando ; García, Rafael
Issue Date1993
PublisherMaterials Research Society
CitationMRS Proceedings 317: 315-320 (1993)
AbstractThe defect structure of GaAsP layer grown by Atomic Layer Molecular Beam Epitaxy on (001) GaAs substrate has been studied by Transmission Electron Microscopy. The phosphorous content and the epilayer thickness have been changed below 25% and 1μm respectively. Three kinds of defect structure have been found: a) α-δ fringes at the interface for coherent epilayer, b) Misfit dislocation for thin epilayers and c) Multiple cracks normal to the interface and parallel to one <110> direction for thick epilayers.
Description6 páginas.-- Comunicación presentada al 1993 MRS Fall Meeting, Symposium B – Mechanisms of Thin Film Evolution.
Publisher version (URL)http://dx.doi.org/10.1557/PROC-317-315
Appears in Collections:(IMN-CNM) Artículos
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