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dc.contributor.authorDunstan, D. J.-
dc.contributor.authorKidd, Petra Susan-
dc.contributor.authorDavid, J. P. R.-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.date.accessioned2011-03-28T07:57:16Z-
dc.date.available2011-03-28T07:57:16Z-
dc.date.issued1994-08-15-
dc.identifier.citationApplied Physics Letters 65(7): 839-841 (1994)es_ES
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/33811-
dc.description3 páginas, 1 figura, 1 tabla.-- et al.es_ES
dc.description.abstractThe plastic relaxation of multilayer structures of strained InGaAs grown above critical thickness on GaAs is reported and compared with the relaxation of single layers and with theory. We show that a composite structure, taken as a whole, follows the same relaxation law as observed in single layers. However, departures of the strains of some component layers from theory show that misfit dislocations are easily pinned at an interface. Implications for the design of relaxed buffer layer growth are discussed.es_ES
dc.description.sponsorshipThis work was supported financially by the Royal Society and the Science and Engineering Research Council (UK), and by the Commission of the European Communities (ESPRIT Basic Research 6854 BLES programme).es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.rightsopenAccesses_ES
dc.titlePlastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structureses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1063/1.112177-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.112177es_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.languageiso639-1en-
item.fulltextWith Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.openairetypeartículo-
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