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Título: | InP tunnel junctions grown by atomic layer molecular beam epitaxy on InP and InP-on-Si substrates |
Autor: | Dotor-Castilla, María Luisa CSIC ORCID; Golmayo, Dolores CSIC; Calle Martín, Ana CSIC; Sendra, José Ramón CSIC; Anguita, José Virgilio CSIC; González Sotos, Luisa CSIC ORCID ; González Díez, Yolanda CSIC ORCID; Briones Fernández-Pola, Fernando CSIC | Fecha de publicación: | mar-1995 | Editor: | Elsevier | Citación: | Solar Energy Materials and Solar Cells | Resumen: | p++/n++ InP tunnel diodes have been fabricated for the first time on InP and Si substrates by solid source Atomic Layer Molecular Beam Epitaxy (ALMBE) at low temperature. The high peak current density exceeding 200 A/cm2 and the low specific resistance exhibited in these diodes indicate that they are appropriate to use as optically transparent interconnects in InP/Ga0.47In0.53As tandem solar cells. This is a very promising result for the use of solid source ALMBE for fabricating these tandem solar cells with a technological process compatible with low temperature technologies, as the conventional silicon technologies. | Descripción: | 6 páginas, 3 figuras. | Versión del editor: | http://dx.doi.org/10.1016/0927-0248(94)00178-2 | URI: | http://hdl.handle.net/10261/33797 | DOI: | 10.1016/0927-0248(94)00178-2 | ISSN: | 0927-0248 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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