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dc.contributor.authorÁlvarez, A. L.-
dc.contributor.authorMuñoz Sandoval, E.-
dc.contributor.authorGarcía, Rafael-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorKidd, P.-
dc.contributor.authorGoodhew, P. J.-
dc.identifier.citationSolid State Electronics 1-8: 647-651 (1996)es_ES
dc.description5 páginas, 4 figuras.-- Póster presentado al VII International Conference on Modulated Semiconductor Structures celebrado en Madrid (España/1995).-- et al.es_ES
dc.description.abstractThe deformation properties of the surface roughening associated with the strain relaxation process have been studied in a set of InxGa1−xAs single layers (0.10≤x≤0.50) grown by different epitaxial techniques on GaAs and InP substrates. Raman spectroscopy performed on samples showing a rough surface reveals that, as the probing depth is reduced, a shift of the GaAs-like longitudinal optical phonon frequency, as well as an increase of the normally forbidden transverse optical mode, are produced. These effects tend to disappear in samples showing a flat relief. The results can be explained if a considerable strain relaxation together with a non-tetragonal distortion of the relaxed material occurred at the surface. Using the information on the surface geometry provided by atomic force microscopy and talystep measurements we have developed a simple elastic model which explains the observations.es_ES
dc.description.sponsorshipA. L. Alvarez is indebted to the Comunidad Autónoma de Madrid for its financial support. This work has been sponsored by CICYT TIC 93-25, TIC 95-I 16 and ESPRIT “BLES” 6854 projects.es_ES
dc.titleNon-uniform strain relaxation in InxGa1−xAs layerses_ES
dc.typepóster de congresoes_ES
dc.description.peerreviewedPeer reviewedes_ES
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