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Non-uniform strain relaxation in InxGa1−xAs layers

AuthorsÁlvarez, A. L.; Muñoz Sandoval, E.; García, Rafael; González Sotos, Luisa ; González Díez, Yolanda ; Kidd, P.; Goodhew, P. J.
Issue Date1996
CitationSolid State Electronics 1-8: 647-651 (1996)
AbstractThe deformation properties of the surface roughening associated with the strain relaxation process have been studied in a set of InxGa1−xAs single layers (0.10≤x≤0.50) grown by different epitaxial techniques on GaAs and InP substrates. Raman spectroscopy performed on samples showing a rough surface reveals that, as the probing depth is reduced, a shift of the GaAs-like longitudinal optical phonon frequency, as well as an increase of the normally forbidden transverse optical mode, are produced. These effects tend to disappear in samples showing a flat relief. The results can be explained if a considerable strain relaxation together with a non-tetragonal distortion of the relaxed material occurred at the surface. Using the information on the surface geometry provided by atomic force microscopy and talystep measurements we have developed a simple elastic model which explains the observations.
Description5 páginas, 4 figuras.-- Póster presentado al VII International Conference on Modulated Semiconductor Structures celebrado en Madrid (España/1995).-- et al.
Publisher version (URL)http://dx.doi.org/10.1016/0038-1101(95)00380-0
Appears in Collections:(IMN-CNM) Artículos
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