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Advantages of thin interfaces in step-graded buffer structures

AuthorsGonzález, David; Araújo, D.; González Sotos, Luisa ; González Díez, Yolanda ; Aragón, G.; García, Rafael
KeywordsDouble crystal X-ray diffraction
Misfit dislocations
Step-graded buffer structures
Transmission electron microscopy
Issue DateFeb-1997
CitationMaterials Science and Engineering B 44(1-3): 41-45 (1997)
AbstractThe effect of graded interfaces in step-graded buffer structures on crystal relaxation efficiency is investigated by transmission electron microscopy and double crystal X-ray diffraction. A higher recombination rate leading to higher edge dislocation densities and a strong diminution of the tilt, is evidenced when graded interfaces are used. The latter feature is a consequence of the poor stability of dislocation multiplication sources in graded interfaces. The lower strain energy release of dislocation segments and a diminution of the pinning points in graded interfaces reduce the lifetime of dislocations sources, producing a better distribution of Burgers vector in the misfit dislocations array.
Description5 páginas, 5 figuras, 1 tabla.-- Comunicación presentada al 3º International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies.
Publisher version (URL)http://dx.doi.org/10.1016/S0921-5107(96)01757-6
Appears in Collections:(IMN-CNM) Artículos
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