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AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1−xP epitaxial layers

AuthorsEremenko, V.; González Sotos, Luisa ; González Díez, Yolanda ; Vdovin, V.; Vázquez, Luis ; Aragón, G.; Herrera, Miriam; Briones Fernández-Pola, Fernando
KeywordsSurface morphology
Transmission electron microscopy
Atomic force microscopy
Issue Date30-Apr-2002
CitationMaterials Science and Engineering B 91-92: 269-273 (2002)
AbstractAn alternative way to characterise composition modulation in InxGa1−xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along [110]. We propose that morphology features observed in the experiments are related to composition modulation effects.
Description5 páginas, 4 figuras.-- Póster presentado al DRIP-IX : 9ª International Conference on Defects- Recognition, Imaging and Physics in Semiconductors celebrada en Rimini (Italia) del 24 al 28 de Septiembre de 2001.
Publisher version (URL)http://dx.doi.org/10.1016/S0921-5107(01)01016-9
Appears in Collections:(ICMM) Artículos
(IMN-CNM) Artículos
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