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dc.contributor.authorFuster, David-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.contributor.authorBen, Teresa-
dc.contributor.authorPonce, Arturo-
dc.contributor.authorMolina, Sergio I.-
dc.date.accessioned2011-03-24T10:34:02Z-
dc.date.available2011-03-24T10:34:02Z-
dc.date.issued2004-
dc.identifier.citationEuropean Physical Journal B - Condensed Matter 40(4): 433-437 (2004)es_ES
dc.identifier.issn1434-6028-
dc.identifier.urihttp://hdl.handle.net/10261/33742-
dc.description5 páginas, 5 figuras, 2 tablas.-- PACS. 81.16.Dn Self-assembly – 78.67.Lt Quantum wires – 81.07.Vb Quantum wires.es_ES
dc.description.abstractIn this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 μ m m or 1.55 μ m m at room temperature. We suggest that the role of growth temperature is to modify the As/P exchange at the InAs QWr/InP cap layer interface and consequently the amount of InAs involved in the nanostructure. In this way, due to the enhancement of the As/P exchange, the higher the growth temperature of the cap layer, the smaller in height the InAs quantum wires. Accordingly, the emission wavelength is blue shifted with InP cap layer growth temperature as the electron and hole ground state moves towards higher energies. Optical studies related to the dynamics of carrier recombination and light emission quenching with temperature are also included.es_ES
dc.description.sponsorshipThis work was partially supported by Spanish MCyT under project No. TIC2002-04096-C03 and by Nanomat project of the EC Growth program, contract n◦ G5RD-CT-2001-00545. D. Fuster thanks the Spanish MCyT for funding.es_ES
dc.language.isoenges_ES
dc.publisherSpringeres_ES
dc.rightsopenAccesses_ES
dc.titleEmission wavelength engineering of InAs/InP(001) quantum wireses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1140/epjb/e2004-00228-4-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1140/epjb/e2004-00228-4es_ES
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