English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33741
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Epilayer thickness influence on composition modulation of low temperature grown InGaAs/GaAs(001) layers

AuthorsHerrera, Miriam; González, David; González Sagardoy, María Ujué ; González Díez, Yolanda ; González Sotos, Luisa ; García, Rafael
KeywordsComposition modulation
Spinodal decomposition
Issue DateSep-2004
PublisherINOE Publishing House
CitationJournal of Optoelectronics and Advanced Materials 6(3): 805-810 (2004)
AbstractWe have developed a Transmission Electron Microscopy study of In0.2Ga0.8As layers grown on GaAs (001) substrates by Atomic Layer Molecular Beam Epitaxy at 200 °C. Our results show that the apparition of composition modulation in these samples depends on the layer thickness, the thinnest being homogeneous. Therefore, the phase separation in these low temperature grown systems should have occurred in bulk on arriving to a critical layer thickness between 80 nm and 300 nm and not at the surface during growth as it has been widely reported. Accumulated elastic energy due to an increasing epilayer thickness seems to be a crucial factor in this critical thickness. On the other hand, we have observed a high asymmetry in the contrast modulation wavelength for these low temperature grown samples for the [110] and [1 10] directions, contrary to the symmetrical ones found in structures grown by conventional MBE at 500 °C.
Description7 páginas, 4 figuras.
Publisher version (URL)http://joam.inoe.ro/arhiva/vol6nr3.html
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Herrera.pdf194,08 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.