English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/33734
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:

DC FieldValueLanguage
dc.contributor.authorFuster, David-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.date.accessioned2011-03-24T09:27:24Z-
dc.date.available2011-03-24T09:27:24Z-
dc.date.issued2006-
dc.identifier.citationJournal of Physics D - Applied Physics 39(23): 4940-4947 (2006)es_ES
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10261/33734-
dc.description8 páginas, 8 figuras.es_ES
dc.description.abstractIn the present work we study the influence of stacking self-assembled InAs quantum wires (QWRs) on the emission wavelength and the excitonic recombination dynamics. The reduction in the InP spacer layer thickness, d(InP), produces both a size filtering effect towards large wire ensembles and an increase in the vertical coupling for electrons and holes along the stack direction. The different vertical coupling for electrons and holes induces a different behaviour in the exciton recombination dynamics, depending on the InP spacer layer thickness: weak electron coupling and negligible hole coupling for d(InP) > 10 nm, intermediate electron coupling and weak hole coupling for 5 nm ≤ d(InP) ≤ 10 nm and strong electron coupling and moderate hole coupling for d(InP) < 5 nm. Such exciton dynamics have been established by comparing the experimental time decay results with a multi-quantum well model accounting for the vertical carrier coupling.es_ES
dc.description.sponsorshipThe authors gratefully acknowledge the financial support by the Spanish MEC and CAM through projects No TEC-2005- 05781-C03-01 and S-505/ESP/000200 and by the European Commission through SANDIE Network of Excellence (No NMP4-CT-2004-500101, group TEP-0120).es_ES
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsclosedAccesses_ES
dc.titleDifferent regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wireses_ES
dc.typeartículoes_ES
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/39/23/007-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1088/0022-3727/39/23/007es_ES
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show simple item record
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.