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dc.contributor.authorFuster, David-
dc.contributor.authorMartínez Pastor, Juan Pascual-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorGonzález Díez, Yolanda-
dc.identifier.citationJournal of Physics D - Applied Physics 39(23): 4940-4947 (2006)es_ES
dc.description8 páginas, 8 figuras.es_ES
dc.description.abstractIn the present work we study the influence of stacking self-assembled InAs quantum wires (QWRs) on the emission wavelength and the excitonic recombination dynamics. The reduction in the InP spacer layer thickness, d(InP), produces both a size filtering effect towards large wire ensembles and an increase in the vertical coupling for electrons and holes along the stack direction. The different vertical coupling for electrons and holes induces a different behaviour in the exciton recombination dynamics, depending on the InP spacer layer thickness: weak electron coupling and negligible hole coupling for d(InP) > 10 nm, intermediate electron coupling and weak hole coupling for 5 nm ≤ d(InP) ≤ 10 nm and strong electron coupling and moderate hole coupling for d(InP) < 5 nm. Such exciton dynamics have been established by comparing the experimental time decay results with a multi-quantum well model accounting for the vertical carrier coupling.es_ES
dc.description.sponsorshipThe authors gratefully acknowledge the financial support by the Spanish MEC and CAM through projects No TEC-2005- 05781-C03-01 and S-505/ESP/000200 and by the European Commission through SANDIE Network of Excellence (No NMP4-CT-2004-500101, group TEP-0120).es_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.titleDifferent regimes of electronic coupling and their influence on exciton recombination in vertically stacked InAs/InP quantum wireses_ES
dc.description.peerreviewedPeer reviewedes_ES
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