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A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects

AuthorsMolina, Sergio I.; Varela, María; Ben, Teresa; Sales, David L.; Pizarro, J.; Galindo, P. L.; Fuster, David ; González Díez, Yolanda ; González Sotos, Luisa ; Pennycook, Stephen J.
Semiconductor nanostructure
High Resolution Z-contrast Imaging
Issue DateJul-2008
PublisherAmerican Scientific Publishers
CitationJournal of nanoscience and nanotechnology 8(7): 3422-3426 (2008)
AbstractWe determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.
Description5 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1166/jnn.2008.123
Appears in Collections:(IMN-CNM) Artículos
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