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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

AuthorsTaboada, Alfonso G.; Sánchez, A. M.; Beltrán, A. M.; Bozkurt, M.; Alonso-Álvarez, Diego ; Alén, Benito ; Rivera de Mena, Antonio ; Ripalda, José María ; Llorens Montolio, José Manuel ; Martín-Sánchez, Javier; González Díez, Yolanda ; Ulloa, J. M.; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; Molina, Sergio I.; Koenraad, P. M.
KeywordsSemiconductor nanostructures
Quantum dots
Structural characterizations
Issue Date14-Dec-2010
PublisherAmerican Physical Society
CitationPhysical Review B 82: 235316 (2010)
AbstractWe present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevB.82.235316
Appears in Collections:(IMN-CNM) Artículos
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