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Growth of epitaxial iron disilicide on Si(100)

AuthorsGallego, J. M.; García Martínez, Jorge Manuel ; Ortega, J. E.; Vázquez de Parga, A. L.; de la Figuera, Juan ; Ocal, Carmen ; Miranda, Rodolfo
Issue Date15-May-1992
CitationSurface Science 269-270: 1016-1021 (1992)
AbstractThe growth of epitaxial FeSi2 on Si(100) substrates under ultrahigh-vacuum conditions has been achieved using two different methods; molecular beam epitaxy and the “template layer” method. The silicide layers have been characterized by surface sensitive techniques such as Auger electron spectroscopy, electron energy loss spectroscopy, scanning tunneling microscopy and low energy electron diffraction.
Description6 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/0039-6028(92)91386-P
Appears in Collections:(IMN-CNM) Artículos
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