Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32123
Share/Export:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Title

Surface stress effects during MBE growth of III–V semiconductor nanostructures

AuthorsSilveira, Juan Pedro CSIC; García Martínez, Jorge Manuel CSIC ORCID CVN ; Briones Fernández-Pola, Fernando
KeywordsA1. Interfaces
A1. Low-dimensional structures
A1. Nanostructures
A1. Stresses
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
Issue DateJul-2001
PublisherElsevier
CitationJournal of Crystal Growth 227-228: 995-999 (2001)
AbstractSurface and interface stress evolution is measured in situ and in real time during molecular beam epitaxy of InAs/GaAs and GaSb/GaAs systems, covering initial 2D growth, formation of QDs and subsequent GaAs capping. These two systems with very similar lattice parameter mismatch but involving quite different surface chemistry show a similar critical thickness for 2D/3D transition, 0.7–1.0 monolayer ML. Limited In incorporation during InAs/GaAs growth affects the relaxation process. In segregation effects are observed during GaAs overgrowth. GaSb/GaAs system presents a strong 2D/3D relaxation associated with mass transport from the 2D layer. Sb/As exchange reactions are considered.
Description5 páginas, 5 figuras.-- PACS: 81.15.Hi; 85.30.Ww; 62.40.+i; 82.30.Hk.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(01)00966-6
URIhttp://hdl.handle.net/10261/32123
DOI10.1016/S0022-0248(01)00966-6
ISSN0022-0248
Appears in Collections:(IMN-CNM) Artículos

Show full item record
Review this work

SCOPUSTM   
Citations

20
checked on Jun 27, 2022

WEB OF SCIENCETM
Citations

19
checked on Jul 1, 2022

Page view(s)

357
checked on Jul 5, 2022

Google ScholarTM

Check

Altmetric

Dimensions


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.