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Title: | Surface stress effects during MBE growth of III–V semiconductor nanostructures |
Authors: | Silveira, Juan Pedro CSIC; García Martínez, Jorge Manuel CSIC ORCID CVN ; Briones Fernández-Pola, Fernando | Keywords: | A1. Interfaces A1. Low-dimensional structures A1. Nanostructures A1. Stresses A3. Molecular beam epitaxy B2. Semiconducting III–V materials |
Issue Date: | Jul-2001 | Publisher: | Elsevier | Citation: | Journal of Crystal Growth 227-228: 995-999 (2001) | Abstract: | Surface and interface stress evolution is measured in situ and in real time during molecular beam epitaxy of InAs/GaAs and GaSb/GaAs systems, covering initial 2D growth, formation of QDs and subsequent GaAs capping. These two systems with very similar lattice parameter mismatch but involving quite different surface chemistry show a similar critical thickness for 2D/3D transition, 0.7–1.0 monolayer ML. Limited In incorporation during InAs/GaAs growth affects the relaxation process. In segregation effects are observed during GaAs overgrowth. GaSb/GaAs system presents a strong 2D/3D relaxation associated with mass transport from the 2D layer. Sb/As exchange reactions are considered. | Description: | 5 páginas, 5 figuras.-- PACS: 81.15.Hi; 85.30.Ww; 62.40.+i; 82.30.Hk. | Publisher version (URL): | http://dx.doi.org/10.1016/S0022-0248(01)00966-6 | URI: | http://hdl.handle.net/10261/32123 | DOI: | 10.1016/S0022-0248(01)00966-6 | ISSN: | 0022-0248 |
Appears in Collections: | (IMN-CNM) Artículos |
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