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Epitaxial metallic nanostructures on GaAs

AuthorsMartínez Boubeta, Carlos ; Menéndez, José Luis ; Costa Krämer, José Luis ; García Martínez, Jorge Manuel ; Anguita, José Virgilio ; Bescós, B.; Cebollada, Alfonso ; Briones Fernández-Pola, Fernando ; Chernykh, A. V.; Malikov, I. V.; Mikhailov, G. M.
Magnesium oxides
Metal–insulator interfaces
Metal–semiconductor magnetic thin film structures
Electrical transport measurements
Magnetic phenomena
Issue Date20-Jun-2001
CitationSurface Science 482-485(2): 910-915 (2001)
AbstractHigh quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.
Description6 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1016/S0039-6028(01)00728-2
Appears in Collections:(IMN-CNM) Artículos
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