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dc.contributor.authorMartínez Boubeta, Carlos-
dc.contributor.authorMenéndez, José Luis-
dc.contributor.authorCosta Krämer, José Luis-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorAnguita, José Virgilio-
dc.contributor.authorBescós, B.-
dc.contributor.authorCebollada, Alfonso-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.contributor.authorChernykh, A. V.-
dc.contributor.authorMalikov, I. V.-
dc.contributor.authorMikhailov, G. M.-
dc.date.accessioned2011-02-08T09:10:11Z-
dc.date.available2011-02-08T09:10:11Z-
dc.date.issued2001-06-20-
dc.identifier.citationSurface Science 482-485(2): 910-915 (2001)es_ES
dc.identifier.issn0039-6028-
dc.identifier.urihttp://hdl.handle.net/10261/32111-
dc.description6 páginas, 4 figuras.es_ES
dc.description.abstractHigh quality metal/insulator heterostructures are grown epitaxially on semiconductor GaAs(1 0 0) substrates using appropriate MgO(1 0 0) buffer layers. Two model systems are described: Fe/MgO/Fe trilayers, that are used to fabricate and study epitaxial magnetic tunnel junctions, and W(1 0 0) films, which exhibit ballistic transport properties with high electron mobility. In both cases the quality of the crystalline structure as well as the interfaces at the atomic level are related to the observed magnetic and transport properties.es_ES
dc.description.sponsorshipThis work has been performed under financial support of NATO Linkage Grant CRG.LG 974637, Spanish City MAT98-0974-C03-01 and MAT 99-0724-C03-03, and CAM 07N/0056/1999. J.L.M. acknowledges financial support from Comunidad de Madrid, Consejería de Educación y Cultura.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccesses_ES
dc.subjectIrones_ES
dc.subjectTungstenes_ES
dc.subjectMagnesium oxideses_ES
dc.subjectMetal–insulator interfaceses_ES
dc.subjectMetal–semiconductor magnetic thin film structureses_ES
dc.subjectEpitaxyes_ES
dc.subjectElectrical transport measurementses_ES
dc.subjectMagnetic phenomenaes_ES
dc.titleEpitaxial metallic nanostructures on GaAses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/S0039-6028(01)00728-2-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1016/S0039-6028(01)00728-2es_ES
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