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In situ measurements of As/P exchange during InAs/InP(0 0 1) quantum wires growth

AuthorsGonzález Sagardoy, María Ujué CSIC ORCID ; García Martínez, Jorge Manuel CSIC ORCID CVN ; González Sotos, Luisa; Silveira, Juan Pedro CSIC; González Díez, Yolanda; Gómez, J. D.; Briones Fernández-Pola, Fernando CSIC
KeywordsIn situ stress measurements
As/P exchange
Molecular beam epitaxy
Issue Date13-Mar-2002
CitationApplied Surface Science 188(1-2): 188-192 (2002)
AbstractUnintentional As/P exchange has a significant influence on InAs/InP nanostructures growth. In this paper, we report on the As/P exchange reactions at different temperatures studied by in situ stress measurements and reflectance difference (RD) characterization. When arsenic atoms are incorporated at the InP surface, an asymmetric stress is built up that is responsible for quantum wires (QWr) formation. We obtain that arsenic atoms do not actively displace phosphorous from the surface at the range of surface temperatures and exposure times of interest for growth of InAs nanostructures by molecular beam epitaxy (MBE). Instead, the arsenic atoms bind to available In atoms left vacant by phosphorous desorption at the corresponding temperature.
Description5 páginas, 4 figuras.-- Comunicación oral presentada al E-MRS 2001 Spring Meeting, Symposium M; Stress and Strain in Heteroepitaxy celebrado en Estrasburgo (Francia/2001).
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