Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32063
Share/Export:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Title

Carrier Recombination in InAs/GaAs Self-Assembled Quantum Dots under Resonant Excitation Conditions

AuthorsRudamas, C.; Martínez Pastor, Juan Pascual; García-Cristobal, Alberto; Roussignol, Philippe; García Martínez, Jorge Manuel CSIC ORCID CVN ; González Sotos, Luisa
Issue DateApr-2002
PublisherWiley-Blackwell
CitationPhysica Status Solidi A 190(2): 583-587 (2002)
AbstractResonant photoluminescence experiments have been performed on self-assembled quantum dots. The emission bands measured in the investigated samples can be deconvoluted in several Gaussian components, which could be related to different size families of dots. The experimental results reveal the importance of GaAs phonons for the carrier relaxation of excess energy, specially for the sample with low dot density. With increasing temperature, electrons from smaller dots can be activated to reach the wetting layer electron states, from which they can be trapped at larger dots (below 100 K) or escape to the GaAs barriers (above 100 K).
Description5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).
Publisher version (URL)http://dx.doi.org/10.1002/1521-396X(200204)190:2<583::AID-PSSA583>3.0.CO;2-8
URIhttp://hdl.handle.net/10261/32063
DOI10.1002/1521-396X(200204)190:2<583::AID-PSSA583>3.0.CO;2-8
ISSN0031-8965
Appears in Collections:(IMN-CNM) Artículos

Show full item record
Review this work

SCOPUSTM   
Citations

2
checked on Jan 17, 2022

Page view(s)

421
checked on Jan 19, 2022

Google ScholarTM

Check

Altmetric

Dimensions


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.