English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32062
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Vertical stacks of small InAs/GaAs self-assembled dots: resonant and non-resonant excitation

AuthorsMartínez Pastor, Juan Pascual ; Alén, Benito ; Rudamas, C.; Roussignol, Philippe; García Martínez, Jorge Manuel ; González Sotos, Luisa
KeywordsQuantum dots
Vertical stacks
Issue DateApr-2003
CitationPhysica E 17: 46-49 (2003)
AbstractWe have performed photoluminescence experiments in samples containing self-assembled quantum dots with different spacer layer thicknesses. A strong filtering effect produced by the GaAs spacer layer on the dots size being stacked is observed for spacers thinner than 10 nm. This effect produces a blue shift of the emission band from stacked dots and a simultaneous line width narrowing. At the same time, given the existence of a broad dot size distribution in the first layer, bigger dots can evolve towards InAs cylinder-like structures, whose emission occurs at appreciably lower energies as compared to the emission band associated to dot stacks (with some GaAs separation).
Description4 páginas, 2 figuras.-- PACS: 78.67.Hc; 73.21.La; 78.55.Cr.-- Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002.
Publisher version (URL)http://dx.doi.org/10.1016/S1386-9477(02)00734-8
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
Martínez-Pastor, J. et al Phys.E_17_2003.pdf300,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.