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Customized nanostructures MBE growth: from quantum dots to quantum rings

AuthorsGranados, Daniel ; García Martínez, Jorge Manuel
KeywordsA1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
Issue DateApr-2003
CitationJournal of Crystal Growth 251(1-4): 213-217 (2003)
AbstractWhen self-assembled InAs/GaAs(0 0 1) quantum dots (QD) are overgrown by a thin (2 nm) GaAs cap under different growth conditions, morphological changes occur. The effects of growth conditions on the final structural properties are analyzed by atomic force microscopy. Under As4, thin cap deposition at 540°C produces elongated dash-like nanostructures, whereas at 500°C two humps are obtained from each QD. When As2 is used and the thin cap is deposited at 500°C, quantum rings are obtained. Ensemble photoluminescence (PL) spectroscopy and polarization PL at 15 K show drastic changes on confinement properties. Shape control results in PL emission tuning from 1110 nm (dots) to 920 nm (rings).
Description5 páginas, 4 figuras.-- PACS: 61.46.+w; 81.16. c; 81.16.Dn; 78.67.Hc.-- Proceedings of the Twelfth International Conference on Molecular Beam Epitaxy.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(02)02512-5
Appears in Collections:(IMN-CNM) Artículos
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