English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/32024
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers

AuthorsTakehana, K.; Pulizzi, F.; Patanè, A.; Henini, M.; Main, P. C.; Eaves, L.; Granados, Daniel ; García Martínez, Jorge Manuel
KeywordsA1. Atomic force microscopy
A1. Morphology
A3. Quantum dots
A3. Quantum rings
Issue DateApr-2003
CitationJournal of Crystal Growth 251(1-4): 155-160 (2003)
AbstractWe investigate by atomic force microscopy the changes in the morphology of InAs self-assembled quantum dots (QDs) following thermal annealing at growth temperature and capping with thin GaAs layers. The thermal annealing results in coalescence of QDs into larger islands. Capping with a GaAs layer produces a significant change in the shape of the largest islands within the dot ensemble, which evolve from “humped-back” island structures for thin (1 nm) cap layers into “ring-shaped” islands for thicker (>4 nm) cap layers. We discuss the morphological changes in terms of indium diffusion from the dots into the cap layer. Finally, we demonstrate resonant tunnelling of electrons into this type of QD structure.
Description6 páginas, 4 figuras.-- PACS: 81.15.H; 61.16.C; 85.30.V.-- Proceedings of the Twelfth International Conference on Molecular Beam Epitaxy.
Publisher version (URL)http://dx.doi.org/10.1016/S0022-0248(02)02407-7
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
There are no files associated with this item.
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.