Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/31230
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Title

High-Density 40 nm Diameter Sb-Rich Bi2–xSbxTe3 Nanowire Arrays

AuthorsMartín-González, Marisol; Prieto, Amy Lucia; Gronsky, Ronald; Sands, Timothy; Stacy, Angelica
KeywordsArrays
Bi2-xSbxTe3
Electrodeposition
Nanowires
Semiconductor
Thermoelectric materials
Issue Date16-Jun-2003
PublisherWiley-Blackwell
CitationAdvanced Materials 15(12): 1003-1006 (2003)
AbstractArrays of 40 nm Bi2–xSbxTe3 nanowires (x ∼ 0.7, density ∼ 5 × 1010 cm–2) have been synthesized. The individual wires are crystalline, relatively homogeneous, and highly textured in a 〈110〉 direction after thermal treatment. Wires containing Sb exhibit incomplete wetting of the alumina templates in which they are grown (see Figure). The composition, crystallinity, and morphology of the nanowires can also be manipulated.
Description4 páginas, 4 figuras.
Publisher version (URL)http://dx.doi.org/10.1002/adma.200304781
URIhttp://hdl.handle.net/10261/31230
DOI10.1002/adma.200304781
ISSN0935-9648
Appears in Collections:(IMN-CNM) Artículos

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