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DC triode sputtering deposition and characterization of N-rich copper nitride thin films: Role of chemical composition

AuthorsGordillo, Nuria; González-Arrabal, Raquel ; Martín-González, Marisol; Olivares Pascual, José; Rivera de Mena, Antonio ; Briones Fernández-Pola, Fernando ; Agulló-López, F.; Boerma, D. O.
KeywordsA1. Optical properties
A1. X-ray diffraction
B1. Nitrides
B2. Semiconducting materials
Issue DateSep-2008
CitationJournal of Crystal Growth 310(19): 4362-4367 (2008)
Abstract(N-rich) Cu3N polycrystalline films were deposited by DC triode sputtering from a copper target in a mixture of argon and nitrogen atmosphere. Their chemical composition, structure and electrical properties have been studied as a function of deposition parameters: nitrogen partial pressure (PN2) and DC bias. Depending on PN2 and DC bias, the atomic nitrogen incorporated into the layers ranges from 26 at% to a limit value of 33 at% as measured by ion beam analysis (IBA) techniques. X-ray diffraction (XRD) data show that most of the layers are single phase, polycrystalline and with preferential 1 0 0 orientation. Optical and electrical measurements indicate that all layers present intrinsic semiconductor behavior with a thermal gap around 0.21–0.25 eV and a direct optical gap between 1.5 and 1.7 eV. The physical properties observed for these films are discussed in relation to nitrogen contents and sputtering parameters.
Description6 páginas, 8 figuras.-- PACS classification codes: 68.55.−a; 78.20.Ci; 78.40.Fy
Publisher version (URL)http://dx.doi.org/10.1016/j.jcrysgro.2008.07.051
Appears in Collections:(CFMAC-IO) Artículos
(IMN-CNM) Artículos
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