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dc.contributor.authorGonzález Sagardoy, María Ujué-
dc.contributor.authorGonzález Díez, Yolanda-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorCalleja, Montserrat-
dc.contributor.authorSilveira, Juan Pedro-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorBriones Fernández-Pola, Fernando-
dc.identifier.citationJournal of Crystal Growth 227-228: 36-40 (2001)es_ES
dc.description13 páginas, 3 figuras.-- PACS: 81.15.Hi, 81.05.Ea, 78.35.+c, 68.35.Bs.-- Comunicación oral presentada en el XI Molecular Beam Epitaxy (MBE-XI), Pekín (11/09/2000).es_ES
dc.description.abstractIn this paper we develop a growth process for obtaining flat and relaxed In0.2Ga0.8As layers on GaAs (0 0 1). The process designed is based on the results obtained by in situ and real time characterization of surface morphology and layer relaxation. In particular, our results show that for growth temperatures Ts200°C the relaxation of In0.2Ga0.8As layers is inhibited and the morphology does not evolve to a crosshatched pattern. After growth thermal treatments of these low-temperature (LT) In0.2Ga0.8As layers induce the development of a very faint (rms=0.5 nm) crosshatched-like morphology. The relaxation process during the thermal annealing is strongly asymmetric and the layers present a high final strain state. By growing on top of the LT layer another In0.2Ga0.8As layer at higher temperature, relaxation is increased up to R≈70% and becomes symmetric. Depending on the growth process of the top layers morphology evolution differs, resulting in better morphologies for top layers grown by atomic layer molecular beam epitaxy (ALMBE) at Ts=400°C. We have obtained 400 nm In0.2Ga0.8As layers with a final degree of relaxation R=70% and very flat surfaces (rms=0.9 nm).es_ES
dc.description.sponsorshipThe authors wish to acknowledge the Spanish “CICYT” for financial support under Project No. TIC99-1035-C02. M.U. González and M. Calleja thank the Consejería de Educación y Cultura de la Comunidad de Madrid for financial support.es_ES
dc.titleA growth method to obtain flat and relaxed In0.2Ga0.8As on GaAs (0 0 1) developed through in situ monitoring of surface topography and stress evolutiones_ES
dc.typecomunicación de congresoes_ES
dc.description.peerreviewedPeer reviewedes_ES
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