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Título: | Preparation and passivation of GaAs(001) surfaces for growing organic molecules |
Autor: | Nicoara, Nicoleta CSIC ORCID; Cerrillo, I.; Xueming, D.; García, B.; García Martínez, Jorge Manuel CSIC ORCID CVN ; Gómez-Navarro, C.; Méndez, Javier CSIC ORCID; Baró, A. M. CSIC | Palabras clave: | Semiconductors Surfaces |
Fecha de publicación: | 23-may-2002 | Editor: | Institute of Physics Publishing | Citación: | Nanotechnology 13(3): 352-356 (2002) | Resumen: | Growth of ordered organic films of 3, 4, 9, 10-perylene-tetracarboxylic-dianhydride (PTCDA), on inorganic substrates of GaAs(001) is investigated by means of low-energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The passivation of the sample can be achieved by exposing the substrate to sulphur (the SnS2 compound) or wet-chemical etching using an S-containing etchant (S2Cl2). The sulphur-treated surfaces are less reactive and are suitable as substrates for the growth of epitaxial films. In this work we have compared the growth of organic molecules on substrates prepared by two different methods. The samples prepared by molecular beam epitaxy (MBE) present smoother surfaces compared with chemically treated samples. Therefore, an improvement of the PTCDA molecular order is observed for the MBE samples, which exhibit the formation of crystals. | Descripción: | 5 páginas, 5 figuras, 1 tabla.-- PACS: 81.65.Rv, 68.37.Ef, 68.37.Ps, 81.65.Cf, 68.47.Fg, 68.55.A- | Versión del editor: | http://dx.doi.org/10.1088/0957-4484/13/3/322 | URI: | http://hdl.handle.net/10261/29086 | DOI: | 10.1088/0957-4484/13/3/322 | ISSN: | 0957-4484 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Páginas de na2322.pdf | 443,89 kB | Adobe PDF | Visualizar/Abrir |
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