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Determination of the energy levels on InAs quantum dots with respect to the GaAs conduction band

AuthorsGranados, Daniel ; García Martínez, Jorge Manuel
Interfaces and thin films
Issue Date2005
PublisherInstitute of Physics Publishing
CitationNanotechnology 16(5): S282-S284 (2005)
AbstractThe electronic energy levels of InAs quantum dots (QDs) have been measured with respect to the GaAs conduction band edge by employing capacitance–voltage spectroscopy with a method which accurately measures the height of the Schottky barrier. To do so, two samples have been grown by molecular beam epitaxy and processed in parallel with Ohmic and Schottky contacts. One sample has no InAs (neither wetting layer nor QDs) which allows an accurate measurement of the Schottky barrier height when the flat band condition is achieved on the device. The measured Schottky barrier height is 760 meV. The second sample has embedded InAs QDs. The measured s-like states of these QDs are 230 meV below the GaAs conduction band.
Description3 páginas, 3 figuras, 1 tabla.-- PACS: 73.21.La Quantum dots; 73.20.At Surface states, band structure, electron density of states; 73.40.Ns Metal-nonmetal contacts; 73.30.+y Surface double layers, Schottky barriers, and work functions.
Publisher version (URL)http://dx.doi.org/10.1088/0957-4484/16/5/027
Appears in Collections:(IMN-CNM) Artículos
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