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Title

Electronic states tuning of InAs self-assembled quantum dots

AuthorsGarcía Martínez, Jorge Manuel CSIC ORCID CVN ; Mankad, T.; Holtz, P. O.; Wellmann, P. J.; Petroff, Pierre M.
KeywordsIII-V semiconductors
Indium compounds
Issue Date15-Jun-1998
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 72(24): 3172-3174 (1998)
AbstractWe demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition.
Description3 páginas, 3 figuras.-- PACS: 778.66.Fd, 78.55.Cr, 81.15.Hi, 81.05.Ea, 73.21.-b, 85.35.Be
Publisher version (URL)http://dx.doi.org/10.1063/1.121583
URIhttp://hdl.handle.net/10261/29024
DOI10.1063/1.121583
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos

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