English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/29007
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Metallization-induced spontaneous silicide formation at room temperature: The Fe/Si case

AuthorsGallego, J. M.; García Martínez, Jorge Manuel CSIC ORCID CVN ; Álvarez, J.; Miranda, Rodolfo CSIC
Issue Date15-Nov-1992
PublisherAmerican Physical Society
CitationPhysical Review B: Condensed Matter and Materials Physics 46(20): 13339-13344 (1992)
AbstractThe composition of the interface resulting from the room-temperature deposition of iron on Si(100) under ultrahigh-vacuum conditions has been monitored by surface-sensitive techniques such as Auger electron spectroscopy, low-energy electron diffraction, and photoemission spectroscopy with synchrotron radiation. The results show unequivocally that the Fe/Si interface is not abrupt, but rather an amorphous intermixed region with composition close to Fe3Si. The formation of this silicidelike layer is related to the metallization of the deposited Fe overlayer. Upon annealing a thick film of Fe, we demonstrate that Fe3Si is the first phase to nucleate, in opposition to standard models that point to FeSi as the first silicide formed.
Description6 páginas, 5 figuras.-- PACS: 68.55.-a, 79.60.-i, 68.35.Fx
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevB.46.13339
Appears in Collections:(IMN-CNM) Artículos
Files in This Item:
File Description SizeFormat 
p13339_1.pdf961,34 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.