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Multiscale modelling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

AutorDubois, Mathieu; Jiménez, David; Andrés, Pedro L. de ; Roche, Stephan
Palabras claveBallistic Electron Emission Microscopy
MOSFET
Fecha de publicación2007
EditorAmerican Physical Society
CitaciónPhys. Rev. B 76, 115337 (2007)
ResumenWe report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and non-equilibrium Greens function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the MSi2(111)/Si(111) and MSi2(111)/Si(100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role fo different materials in configurations relevant for heterostructure nanowires.
URIhttp://hdl.handle.net/10261/2760
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