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Title

Optical properties of InSb layers confined by InP

AuthorsUtzmeier, T.; Armelles Reig, Gaspar CSIC ORCID; Postigo, Pablo Aitor CSIC ORCID; Briones Fernández-Pola, Fernando
KeywordsInSb layers
Photoluminescence
Issue Date15-Aug-1997
PublisherAmerican Physical Society
CitationPhysical Review B 56(7) : 3621-3623 (1997)
AbstractThe photoluminescence properties of InSb submonolayers and dots are presented. When the amount of InSb deposit on InP is less than 1 ML the growth mode remains two dimensional, while for greater amounts three-dimensional quantum dots are formed. Within the two-dimensional growth mode range the energy of the InSb-related transition decreases as we increase the amount of InSb deposited within the limits of said range. No InSb absorption features have been detected. The observed photoluminescence is interpreted as a recombination of electrons in the InP layers with holes in the InSb layers. We estimate a valence-band offset of 1.525 eV, similar to the predictions of the solid-model theory (1.600 eV). In the samples with InSb dots an InSb related transition has been observed, which is attributed to the wetting layer.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevB.56.3621
URIhttp://hdl.handle.net/10261/27408
DOI10.1103/PhysRevB.56.3621
ISSN0163-1829
Appears in Collections:(IMN-CNM) Artículos

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