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Optical studies of GaAs quantum wells strained to GaP

AuthorsPrieto, J. A.; Armelles Reig, Gaspar CSIC ORCID; Pistol, M. E.; Castrillo, Pedro; Silveira, Juan Pedro CSIC; Briones Fernández-Pola, Fernando CSIC ORCID
KeywordsGallium arsenide
Gallium compounds
III-V semiconductors
Semiconductor quantum wells
Issue Date23-Jun-1997
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 70(25): 3449-3451 (1997)
AbstractQuantum wells of GaAs lattice matched to GaP have been studied by photoluminescence and electroreflectance. The quantum well thickness was varied between 1 and 6 monolayers in steps of 1 monolayer. Electron-hole transitions have been observed involving states both in the X band and in the Γ band, which have been modeled using a k.p. model in conjunction with the envelope function approximation. Overall agreement between theory and experiment is found using an unstrained valence band offset of 0.6 eV.
Publisher version (URL)http://dx.doi.org/10.1063/1.119198
Appears in Collections:(IMN-CNM) Artículos
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