Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/27321
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy |
Autor: | Postigo, Pablo Aitor CSIC ORCID; Dotor-Castilla, María Luisa CSIC ORCID; Huertas, P.; García-Pérez, Fernando CSIC; Golmayo, Dolores CSIC; Briones Fernández-Pola, Fernando CSIC | Palabras clave: | Indium compounds Semiconductor epitaxial layers Beryllium, III-V semiconductors Hall effect |
Fecha de publicación: | 1999 | Editor: | American Institute of Physics | Citación: | Journal of Applied Physics 85(9) : 6567-6570 (1999) | Resumen: | Beryllium-doped InP layers have been grown by solid source atomic layer molecular beam epitaxy at low substrate temperature. The residual n-type doping was reduced by controlling both the amplitude and the length of the phosphorus pulse. We have shown a well controlled p-type doping and obtained a hole concentration in the range 4×1017–3×1019 cm−3 at room temperature. The electrical and optical properties of InP layers grown at low temperatures were investigated by Hall effect and photoluminescence (PL) measurements. PL spectra for lightly doped samples have a near band emission at 1.41 eV and Be-related emissions around 1.38 eV. | Versión del editor: | http://dx.doi.org/10.1063/1.370503 | URI: | http://hdl.handle.net/10261/27321 | DOI: | 10.1063/1.370503 | ISSN: | 0021-8979 | E-ISSN: | 1089-7550 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
electrical.pdf | 125,86 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
5
checked on 18-abr-2024
WEB OF SCIENCETM
Citations
6
checked on 29-feb-2024
Page view(s)
376
checked on 24-abr-2024
Download(s)
365
checked on 24-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.