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dc.contributor.authorKegel, I.-
dc.contributor.authorMetzger, T. H.-
dc.contributor.authorLorke, Axel-
dc.contributor.authorPeisl, J.-
dc.contributor.authorStangl, J.-
dc.contributor.authorBauer, G.-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorPetroff, Pierre M.-
dc.date.accessioned2010-07-07T08:07:00Z-
dc.date.available2010-07-07T08:07:00Z-
dc.date.issued2000-08-21-
dc.identifier.citationPhysical Review Letters 85, 1694–1697 (2000)en_US
dc.identifier.issn0163-1829-
dc.identifier.urihttp://hdl.handle.net/10261/26048-
dc.description.abstractTomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.en_US
dc.description.sponsorshipWe thank K. Nordlund for his swift support with the atomistic calculations and D. Smilgies for the excellent conditions at the TROÏKA II beamline at the European Synchrotron Radiation Facility. This work was supported by the Deutsche Forschungsgemeinschaft under Grant No. Pe 127/1-612.en_US
dc.format.extent269468 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.rightsopenAccessen_US
dc.titleNanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dotsen_US
dc.typeArtículoen_US
dc.identifier.doi10.1103/PhysRevLett.85.1694-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1103/PhysRevLett.85.1694en_US
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