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| Título: | Physical characterization of filamentary structures in TiN/Ti/HfO2/W memristor devices |
Autor: | Poblador, Samuel CSIC ORCID ; Maestro, Marcos; Acero Leal, María Cruz CSIC ORCID ; González, M. B.; Campabadal, Francesca CSIC ORCID | Fecha de publicación: | 14-nov-2018 | Citación: | 12th Spanish Conference on Electron Devices (2018) | Resumen: | In this work, the physical degradation of Ni/HfO2/n+-Si RRAM devices occurring during negative unipolar resistive switching cycling is analyzed. In most of the cases, a localized defect is generated in the dielectric layer after the forming process. However, due to the electrical stress, in some devices a complete degradation is observed comprising a crater-like structure, being this behavior correlated to a sudden increase of the current in the low resistance state. | Descripción: | Resumen del trabajo presentado en la 12th Spanish Conference on Electron Devices (CDE 2018), celebrada en Salamanca (España), del 14 al 16 de noviembre de 2018 | URI: | http://hdl.handle.net/10261/258236 |
| Aparece en las colecciones: | (IMB-CNM) Comunicaciones congresos |
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| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| Physical degradation.pdf | 2,72 MB | Adobe PDF |  Visualizar/Abrir |
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