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Solid-source molecular-beam epitaxy for monolithic integration of laser emitters and photodetectors on GaAs chips

AutorPostigo, Pablo Aitor ; Fonstad, C. G.; Choi, S.; Goodhue, W. D.
Palabras claveOptoelectronic devices
Molecular beam epitaxial growth
Gallium arsenide
Semiconductor lasers
Integrated circuits
Light sources
Metal-semiconductor-metal structures
Fecha de publicación4-dic-2000
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 77, 3842 (2000)
ResumenA solid-source molecular beam epitaxy has been used to grow Al-free InGaP/GaAs/InGaAs in-plane side emitting laser (IPSELs) devices on foundry available GaAs integrated circuits (IC) chips with integrated metal–semiconductor–metal photodetectors. The GaAs IC chips were cleaned at low temperature (470 °C) by monoatomic hydrogen prior to epitaxy. Br2 reactive ion etching was used after growth to make laser facets and parabolic mirrors for vertical emission. Using these techniques, we obtained laser emission from the integrated IPSEL devices, suggesting that these devices may be an alternative approach to that offered by vertical cavity surface emitting lasers in the fabrication of optoelectronic integrated devices.
Versión del editorhttp://dx.doi.org/10.1063/1.1331350
Aparece en las colecciones: (IMN-CNM) Artículos
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