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Título

On the applicability of InGaP:Si and AlGaAs:Sn piezoresistive pressure sensors in the 2.5 GPa range

AutorLitwin-Staszewska, E.; Trzeciakowski, Witold A.; Dmowski, Lesław H.; Piotrzkowski, Ryszard; González Sotos, Luisa CSIC ORCID ; Zytkiewicz, Z. R.
Palabras clavePressure sensors
Piezoresistivity
Graded-gap semiconductors
InGaP:Si
AlGaAs:Sn
Fecha de publicación14-dic-1999
EditorElsevier
CitaciónSensors and Actuators - A - Physical Sensors 78(2): 130-137 (1999)
ResumenResistivity and Hall concentration was measured in several InGaP:Si and graded-gap AlGaAs:Sn epitaxial layers as a function of temperature from 77 to 350 K and of hydrostatic pressure up to 2.5 GPa. Strong pressure variation of resistivity was found together with weak temperature dependence in both types of samples which makes them good candidates for piezoresistive pressure sensors. The common origin of these properties seems to be the broad distribution of impurity states resonant with the conduction band. In InGaP:Si, the broadening of the impurity states is probably due to alloy splitting while in graded-gap AlGaAs:Sn the composition gradient leads to the smearing of impurity states with respect to the conduction-band edge. The optimum performance of the sensors can be expected if we combine the two mechanisms, i.e., in graded-gap InGaAlP:Si layers.
Versión del editorhttps://doi.org/10.1016/S0924-4247(99)00235-6
URIhttp://hdl.handle.net/10261/257139
DOI10.1016/S0924-4247(99)00235-6
ISSN0924-4247
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