Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/257139
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | On the applicability of InGaP:Si and AlGaAs:Sn piezoresistive pressure sensors in the 2.5 GPa range |
Autor: | Litwin-Staszewska, E.; Trzeciakowski, Witold A.; Dmowski, Lesław H.; Piotrzkowski, Ryszard; González Sotos, Luisa CSIC ORCID ; Zytkiewicz, Z. R. | Palabras clave: | Pressure sensors Piezoresistivity Graded-gap semiconductors InGaP:Si AlGaAs:Sn |
Fecha de publicación: | 14-dic-1999 | Editor: | Elsevier | Citación: | Sensors and Actuators - A - Physical Sensors 78(2): 130-137 (1999) | Resumen: | Resistivity and Hall concentration was measured in several InGaP:Si and graded-gap AlGaAs:Sn epitaxial layers as a function of temperature from 77 to 350 K and of hydrostatic pressure up to 2.5 GPa. Strong pressure variation of resistivity was found together with weak temperature dependence in both types of samples which makes them good candidates for piezoresistive pressure sensors. The common origin of these properties seems to be the broad distribution of impurity states resonant with the conduction band. In InGaP:Si, the broadening of the impurity states is probably due to alloy splitting while in graded-gap AlGaAs:Sn the composition gradient leads to the smearing of impurity states with respect to the conduction-band edge. The optimum performance of the sensors can be expected if we combine the two mechanisms, i.e., in graded-gap InGaAlP:Si layers. | Versión del editor: | https://doi.org/10.1016/S0924-4247(99)00235-6 | URI: | http://hdl.handle.net/10261/257139 | DOI: | 10.1016/S0924-4247(99)00235-6 | ISSN: | 0924-4247 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
2
checked on 22-mar-2024
WEB OF SCIENCETM
Citations
2
checked on 29-feb-2024
Page view(s)
24
checked on 28-mar-2024
Download(s)
4
checked on 28-mar-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.