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Título: | Hot carrier reliability in deep-submicrometer LATID NMOSFETs |
Autor: | Rafí, J. M. CSIC ORCID ; Campabadal, Francesca CSIC ORCID | Fecha de publicación: | 1-abr-2000 | Resumen: | The hot-carrier degradation of large angle tilt implanted drain (LATID) NMOSFETs of a 0.35 μm CMOS technology is analysed and compared to the degradation behaviour of standard LDD devices.LATID NMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity. By means of I-V characterisation and charge pumping measurements, the different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. © 2000 Elsevier Science Ltd. All rights reserved. | Versión del editor: | https://doi.org/10.1016/S0026-2714(99)00300-5 | URI: | http://hdl.handle.net/10261/256998 |
Aparece en las colecciones: | (IMB-CNM) Artículos |
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