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Título: | Deposition temperature and thermal annealing effects on the electrical characteristics of atomic layer deposited Al<inf>2</inf>O<inf>3</inf> films on silicon |
Autor: | Rafí, J. M. CSIC ORCID ; Zabala, Miguel; Beldarrain, O.; Campabadal, Francesca CSIC ORCID | Fecha de publicación: | 2011 | Resumen: | Atomic layer deposition (ALD) of Al2O3 is of interest for a wide range of micro-nanoelectronic applications, where the electrical properties of the deposited layers can be strongly affected by deposition conditions and post-deposition treatments. In this work, a mercury-probe capacitance-voltage characterization is carried out on Al2O 3 films deposited on silicon by ALD at different temperatures and subjected to various thermal treatments in N2 ambient. Effective positive charges located at the semiconductor/dielectric interface are encountered for the films deposited at the lowest temperature (100°C). Positive Vfb shifts are always registered after the different thermal annealing conditions studied; however, the impact of the thermal treatments is found to be different depending on the deposition temperature. A significant negative charges build-up is observed after a 30 min anneal at 450°C, where improved surface passivation properties are achieved. Interestingly, the hysteresis, as well as the Vfb shifts, clearly diminish for higher deposition temperatures or after a thermal anneal. However, the highest temperature treatments (800C) result in significant interface states generation. Finally, exploratory experiments about the stability of the Al 2O3 layers under UV-light irradiation (in the 200-300 nm wavelengths range) show that this can be responsible for a significant degradation of their electrical characteristics. © 2011 The Electrochemical Society. | Versión del editor: | https://doi.org/10.1149/1.3559458 | URI: | http://hdl.handle.net/10261/256983 | DOI: | 10.1149/1.3559458 | ISSN: | 0013-4651 |
Aparece en las colecciones: | (IMB-CNM) Artículos |
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Manuscript_#JES-10-0845R1_3rd_revision_vfinal.pdf | 993,71 kB | Adobe PDF | Visualizar/Abrir |
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