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Título: | 10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: Electrical characterization and gamma irradiation effects |
Autor: | Rafí, J. M. CSIC ORCID ; Pellegrini, Giulio CSIC ORCID; Quirion, David; Hidalgo, Salvador ; Godignon, P.; Matilla, O.; Juanhuix, Judith; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, Pablo | Palabras clave: | beam-intensity monitors | Beam-line instrumentation (beam position and profile monitors | bunch length monitors) | Radiation damage to detector materials (solid state) | Si microstrip and pad detectors; X-ray detectors | Fecha de publicación: | 2-ene-2017 | Editor: | Sissa Medialab | Citación: | Journal of Instrumentation | Resumen: | Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated. | Versión del editor: | https://doi.org/10.1088/1748-0221/12/01/C01004 | URI: | http://hdl.handle.net/10261/256978 | DOI: | 10.1088/1748-0221/12/01/C01004 |
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10 um thin four quadrant diodes for beam alignment_irradiated_IWORID2016_JI_v30set2016.pdf | 845,59 kB | Adobe PDF | Visualizar/Abrir |
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