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Observation of dislocation generation in highly strained quantum well lasers during operation

AuthorsMazuelas Esteban, Ángel José; Dotor, María Luisa CSIC ORCID; Golmayo, Dolores CSIC; Zeimer, U.; Baumbach, T.; Luebbert, D.; Grenzer, J.; Baruchel, J.
Quantum optics
Issue Date21-May-2001
PublisherInstitute of Physics Publishing
CitationJournal of Physics D: Applied Physics 34(10A): A117-A121 (2001)
AbstractFor the first time, we have obtained the real-time observation, by x-ray topography, of the laser degradation due to the formation of misfit dislocations. We drive the laser diode under a high-energy, high-flux synchrotron micro-x-ray beam. We simultaneously obtain both the laser characteristic curve and the structural characteristics during operation, i.e. the presence of misfit dislocations, laser diode curvature and strain status. From the strain we measure the temperature increase in the epilayer due to the injection current. In other lasers device degradation occurred without the formation of misfit dislocations, but by mass transport, and in other lasers no structural degradation was observed.
Description5 páginas, 8 figuras.
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Appears in Collections:(IMN-CNM) Artículos

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