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Título

Observation of dislocation generation in highly strained quantum well lasers during operation

AutorMazuelas Esteban, Ángel José ; Dotor, María Luisa ; Golmayo, Dolores ; Zeimer, U.; Baumbach, T.; Luebbert, D.; Grenzer, J.; Baruchel, J.
Palabras claveOptics
Quantum optics
Lasers
Fecha de publicación21-may-2001
EditorInstitute of Physics Publishing
CitaciónJournal of Physics D: Applied Physics 34(10A): A117-A121 (2001)
ResumenFor the first time, we have obtained the real-time observation, by x-ray topography, of the laser degradation due to the formation of misfit dislocations. We drive the laser diode under a high-energy, high-flux synchrotron micro-x-ray beam. We simultaneously obtain both the laser characteristic curve and the structural characteristics during operation, i.e. the presence of misfit dislocations, laser diode curvature and strain status. From the strain we measure the temperature increase in the epilayer due to the injection current. In other lasers device degradation occurred without the formation of misfit dislocations, but by mass transport, and in other lasers no structural degradation was observed.
Descripción5 páginas, 8 figuras.
Versión del editorhttp://dx.doi.org/10.1088/0022-3727/34/10A/324
URIhttp://hdl.handle.net/10261/25667
DOI10.1088/0022-3727/34/10A/324
ISSN0022-3727
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