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Ion sensor based on differential measurement, and production method

AuthorsBaldi Coll, Antonio; Domínguez, Carlos; Jiménez-Jorquera, Cecilia CSIC ORCID CVN ; Fernández Sánchez, César CSIC ORCID ; Llobera, Andreu; Merlos Domingo, Ángel CSIC ORCID ; Cadarso Busto, Víctor Javier; Burdallo, Isabel; Vera Gras, Ferran
Issue Date8-Oct-2019
CitationUS10436743 B2
AbstractIon sensor based on differential measurement comprising an ISFTET-REFET pair wherein the REFET is defined by a structure composed of an ISFET covered by a microreservoir where an internal reference solution is contained. The sensor comprises a first and a second ion-selective field effect transistor, an electrode, a substrate on the surface whereof are integrated the two transistors, connection tracks and the electrode and a structure adhered on the first ion-selective field effect transistor which creates a microreservoir on the gate of said first transistor, with the microreservoir having a microchannel which connects the microreservoir with the exterior and the microreservoir being filled with the reference solution
Appears in Collections:(IMB-CNM) Patentes

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