Please use this identifier to cite or link to this item:
logo share SHARE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Ion sensor based on differential measurement, and production method

AuthorsBaldi Coll, Antonio; Domínguez, Carlos; Jiménez-Jorquera, Cecilia CSIC ORCID CVN ; Fernández Sánchez, César CSIC ORCID ; Llobera, Andreu; Merlos Domingo, Ángel CSIC ORCID ; Cadarso Busto, Víctor Javier; Burdallo, Isabel; Vera Gras, Ferran
Issue Date21-Dec-2016
CitationEP3106865 A1
AbstractThe invention relates to an ion sensor based on differential measurement, comprising an ISFET/REFET pair, wherein the REFET is defined by a structure formed by an ISFET covered by a micro-reservoir containing an internal reference solution. The sensor comprises: a first and a second ion-selective field effect transistor; an electrode; a substrate on the surface of which the two transistors, connection tracks and the electrode are integrated; and a structure adhered to the first ion-selective field effect transistor, creating a micro-reservoir on the gate of said first transistor, said micro-reservoir having a micro-channel connecting the micro-reservoir with the exterior, and said micro-reservoir being filled with the reference solution
Appears in Collections:(IMB-CNM) Patentes

Files in This Item:
File Description SizeFormat
EP3106865A1.pdf1,7 MBAdobe PDFThumbnail
Show full item record
Review this work

Page view(s)

checked on May 25, 2022

Google ScholarTM


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.