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Título

Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

AutorAlén, Benito ; Martínez-Pastor, Juan; González Sotos, Luisa ; García Martínez, Jorge Manuel ; García Martínez, Jorge Manuel ; Molina, Sergio I.; Ponce, Arturo; García García, Ricardo
Palabras claveQuantum wires
Molecular-beam epitaxy
Photoluminescence
Exciton
Multilayer structure
Fecha de publicación29-may-2002
EditorAmerican Physical Society
CitaciónPhysical Review B 65, 241301(R) (2002)
ResumenMultilayer structure containing vertically stacked InAs/InP self-assembled quantum wires have been successfully grown by molecular-beam epitaxy. The influence of the InP spacer layer thickness on the structural and optical properties of the wire superlattice has been studied by means of transmission electron microscopy and photoluminescence. The coherent propagation of the strain field in the sample with a 5-nm-thick spacer determines by a size filtering effect a good homogeneity and uniformity of the wire stacks, and hence a good optical quality. The exciton recombination dynamics in the wire superlattice cannot be related to thermal escape of carriers out to the barriers, as occurs in single layer samples.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.65.241301
URIhttp://hdl.handle.net/10261/25405
DOI10.1103/PhysRevB.65.241301
ISSN1098-0121
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