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Title

High-temperature solar-selective coatings based on Cr(Al)N. Part 1: Microstructure and optical properties of CrNy and Cr1-xAlxNy films prepared by DC/HiPIMS

AuthorsRojas, T. Cristina; Caro, A.; Lozano, Gabriel CSIC ORCID; Sánchez-López, J.C. CSIC ORCID
Issue Date2021
PublisherElsevier BV
CitationSolar Energy Materials and Solar Cells 223 (2021)
AbstractIn order to explore the potentialities of Cr(Al)N materials in multilayer-based solar selective coatings (SSC) for high temperature applications (T > 500 °C), the optical behavior of Cr(Al)N films is studied in this work. Two sets of layers (CrN and CrAlN) were prepared by direct current (DC) and high-power impulse magnetron sputtering (HiPIMS) technology. The deposition parameters: N flux, HiPIMS frequency and aluminum sputtering power, were modified to get a wide variety of stoichiometries. The composition, morphology, phases and electronic structure of the films were characterized in depth. The optical behavior was determined by UV–Vis–NIR and FTIR spectroscopies, and the optical constants were obtained from the measured transmittance and reflectance spectra based on appropriate dielectric function models. Our results indicate that small changes in the layer composition influence the optical constants. In particular, a metallic-like behavior was obtained for CrN layers with N vacancies (CrN and CrN films) while a semiconductor-like behavior was observed for CrN. Thus, the CrN films can be used as effective absorber layer in multilayer-based SSC, and namely, the CrN film as an IR reflector/absorber layer too. Likewise, the optical properties of CrAlN layers can also be tuned from metallic to semiconductor-like behavior depending on the chemical composition. Indeed, the absorption coefficients of CrAlN films with optimized Al content and N-vacancies are comparable to those reported for state-of-the-art materials such as TiAlN or TiAlCrN. In addition, a CrAlN film was found to be a suitable IR reflector/absorber layer.
Publisher version (URL)http://dx.doi.org/10.1016/j.solmat.2020.110951
URIhttp://hdl.handle.net/10261/250919
DOI10.1016/j.solmat.2020.110951
Identifiersdoi: 10.1016/j.solmat.2020.110951
issn: 0927-0248
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